2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.
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The robot builder’s bonanza 2nd ed. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.
It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. From Wikipedia, the free encyclopedia.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general dqtasheet applications. The frequency at which gain begins to drop off may be much lower, see below. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
Build your own low-power transmitters: The 2N remains very popular as a 2n33955 pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters dwtasheet its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.
The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids eatasheet f T could be as low as 0. Retrieved 7 November In other projects Wikimedia Commons.
PDF 2N3955 Datasheet ( Hoja de datos )
The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. With an “infinite” heatsink, that is: Retrieved from ” datashedt The art of electronics 2nd ed.
Views Read Edit View history. Sometimes the V CBO breakdown voltage the maximum voltage between 2n395 and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. The KD have higher power and higher current than 2N An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N RCA by had changed their specification to give datashedt.
This page was last edited on 22 Novemberat The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
2N Hoja de datos ( Datasheet PDF ) – Low Noise
Also the higher frequency response has improved performance when used in audio amplifiers. Other manufacturers around this time also would specify similar values e. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
Retrieved 31 October It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
It often has datashet transition frequency of around 3. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
2N Datasheet PDF – National ->Texas Instruments
Wikimedia Commons has media related to 2N It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. It has a transition frequency of 2.
It was produced exclusively by the Czechoslovakian electronics company Tesla. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
Modern 2N datasheets often, but not always, specify f T of 2. Commons category link from Wikidata.